 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUZ 74 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 74 VDS 500 V ID 2.4 A RDS(on) 3 Package TO-220 AB Ordering Code C67078-S1314-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 2.4 Unit A ID IDpuls 9.5 TC = 30 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 2.4 5 mJ ID = 2.4 A, VDD = 50 V, RGS = 25 L = 56.3 mH, Tj = 25 C Gate source voltage Power dissipation 180 VGS Ptot 20 40 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 3.1 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 74 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 500 3 0.1 10 10 2.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 500 V, VGS = 0 V, Tj = 25 C VDS = 500 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 3 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 1.5 A Semiconductor Group 2 07/96 BUZ 74 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1.8 2.1 450 50 20 - S pF 675 75 30 ns 8 12 VDS 2 * ID * RDS(on)max, ID = 1.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 2.1 A RGS = 50 Rise time tr 40 60 VDD = 30 V, VGS = 10 V, ID = 2.1 A RGS = 50 Turn-off delay time td(off) 50 65 VDD = 30 V, VGS = 10 V, ID = 2.1 A RGS = 50 Fall time tf 30 40 VDD = 30 V, VGS = 10 V, ID = 2.1 A RGS = 50 Semiconductor Group 3 07/96 BUZ 74 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1 300 2.5 2.4 9.5 V 1.3 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 4.8 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 74 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 2.6 A 45 W 2.2 Ptot 35 30 ID 2.0 1.8 1.6 25 20 15 10 5 0 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 A K/W t = 21.0s p ID 10 1 ZthJC 10 0 100 s = V D S / I D DS (o n) 10 0 1 ms 10 -1 D = 0.50 0.20 R 10 ms 0.10 10 -2 0.05 0.02 single pulse 0.01 10 -1 DC 10 -2 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 74 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 5.5 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 10 Ptot = 40W l k ih g j f VGS [V] e a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b c ID 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 RDS (on) 8 7 6 5 d d e d f g h i 4 f e g i h j c j k l 3 2 b 0.5 0.0 0 5 10 15 20 25 30 a 1 VGS [V] = a 5.0 4.5 4.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 35 V 45 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 4.5 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 4.0 S ID 3.5 3.0 gfs 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS A ID 4.0 Semiconductor Group 6 07/96 BUZ 74 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 1.5 A, VGS = 10 V 12 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 10 98% RDS (on) VGS(th) 3.6 3.2 9 typ 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 C 160 2.8 2.4 2.0 2% 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 1 nF C 10 0 A IF 10 0 Ciss 10 -1 10 -1 Tj = 25 C typ Coss Tj = 150 C typ Tj = 25 C (98%) Crss 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 Tj = 150 C (98%) 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 74 Avalanche energy EAS = (Tj ) parameter: ID = 2.4 A, VDD = 50 V RGS = 25 , L = 56.3 mH 190 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 4 A 16 V 160 EAS 140 120 100 80 VGS 12 10 0,2 VDS max 8 0,8 VDS max 6 60 4 40 20 0 20 2 0 40 60 80 100 120 C 160 0 4 8 12 16 20 24 28 nC 36 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 600 V 580 V(BR)DSS 570 560 550 540 530 520 510 500 490 480 470 460 450 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 74 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
Price & Availability of BUZ74
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |